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mosfet metaloxidesemiconductorfieldeffecttransistor coolmos?p6 600vcoolmos?p6powertransistor ipx60r099p6 datasheet rev.2.1 final powermanagement&multimarket
2 600vcoolmos?p6powertransistor ipw60r099p6,ipp60r099p6,IPA60R099P6 rev.2.1,2015-05-18 final data sheet to-247 to-220 to-220fp 1description coolmos?isarevolutionarytechnologyforhighvoltagepower mosfets,designedaccordingtothesuperjunction(sj)principleand pioneeredbyinfineontechnologies.coolmos?p6seriescombinesthe experienceoftheleadingsjmosfetsupplierwithhighclassinnovation. theoffereddevicesprovideallbenefitsofafastswitchingsjmosfet whilenotsacrificingeaseofuse.extremelylowswitchingandconduction lossesmakeswitchingapplicationsevenmoreefficient,morecompact, lighterandcooler. features ?increasedmosfetdv/dtruggedness ?extremelylowlossesduetoverylowfomrdson*qgandeoss ?veryhighcommutationruggedness ?easytouse/drive ?pb-freeplating,halogenfreemoldcompound ?qualifiedforindustrialgradeapplicationsaccordingtojedec(j-std20 andjesd22) applications pfcstages,hardswitchingpwmstagesandresonantswitchingstages fore.g.pcsilverbox,adapter,lcd&pdptv,lighting,server,telecom andups. pleasenote:formosfetparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. table1keyperformanceparameters parameter value unit v ds @ t j,max 650 v r ds(on),max 99 m w q g.typ 70 nc i d,pulse 109 a e oss @400v 8.8 j body diode di/dt 300 a/s type/orderingcode package marking relatedlinks ipw60r099p6 pg-to 247 ipp60r099p6 pg-to 220 IPA60R099P6 pg-to 220 fullpak 6r099p6 see appendix a tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
3 600vcoolmos?p6powertransistor ipw60r099p6,ipp60r099p6,IPA60R099P6 rev.2.1,2015-05-18 final data sheet tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 appendix a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
4 600vcoolmos?p6powertransistor ipw60r099p6,ipp60r099p6,IPA60R099P6 rev.2.1,2015-05-18 final data sheet 2maximumratings at t j =25c,unlessotherwisespecified table2maximumratings values min. typ. max. parameter symbol unit note/testcondition continuous drain current 1) i d - - - - 37.9 24.0 a t c =25c t c =100c pulsed drain current 2) i d,pulse - - 109 a t c =25c avalanche energy, single pulse e as - - 796 mj i d =6.6a; v dd =50v; see table 10 avalanche energy, repetitive e ar - - 1.21 mj i d =6.6a; v dd =50v; see table 10 avalanche current, repetitive i ar - - 6.6 a - mosfet dv/dt ruggedness dv/dt - - 100 v/ns v ds =0...400v gate source voltage (static) v gs -20 - 20 v static; gate source voltage (dynamic) v gs -30 - 30 v ac (f>1 hz) power dissipation (non fullpak) to-220, to-247 p tot - - 278 w t c =25c power dissipation (fullpak) to-220fp p tot - - 34 w t c =25c storage temperature t stg -55 - 150 c - operating junction temperature t j -55 - 150 c - mounting torque (non fullpak) to-220, to-247 - - - 60 ncm m3 and m3.5 screws mounting torque (fullpak) to-220fp - - - 50 ncm m2.5 screws continuous diode forward current i s - - 32.9 a t c =25c diode pulse current 2) i s,pulse - - 109 a t c =25c reverse diode dv/dt 3) dv/dt - - 15 v/ns v ds =0...400v, i sd <= i s , t j =25c see table 8 maximum diode commutation speed di f /dt - - 300 a/ m s v ds =0...400v, i sd <= i s , t j =25c see table 8 insulation withstand voltage for to-220fp v iso - - 2500 v v rms , t c =25c, t =1min 1) limited by t j max . maximum duty cycle d=0.75 2) pulse width t p limited by t j,max 3) identicallowsideandhighsideswitchwithidentical r g tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
5 600vcoolmos?p6powertransistor ipw60r099p6,ipp60r099p6,IPA60R099P6 rev.2.1,2015-05-18 final data sheet 3thermalcharacteristics table3thermalcharacteristics(nonfullpak)to-220,to-247 values min. typ. max. parameter symbol unit note/testcondition thermal resistance, junction - case r thjc - - 0.45 c/w - thermal resistance, junction - ambient r thja - - 62 c/w leaded soldering temperature, wavesoldering only allowed at leads t sold - - 260 c 1.6mm (0.063 in.) from case for 10s table4thermalcharacteristics(fullpak)to-220fp values min. typ. max. parameter symbol unit note/testcondition thermal resistance, junction - case r thjc - - 3.65 c/w - thermal resistance, junction - ambient r thja - - 80 c/w leaded soldering temperature, wavesoldering only allowed at leads t sold - - 260 c 1.6mm (0.063 in.) from case for 10s tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
6 600vcoolmos?p6powertransistor ipw60r099p6,ipp60r099p6,IPA60R099P6 rev.2.1,2015-05-18 final data sheet 4electricalcharacteristics at t j =25c,unlessotherwisespecified table5staticcharacteristics values min. typ. max. parameter symbol unit note/testcondition drain-source breakdown voltage v (br)dss 600 - - v v gs =0v, i d =1ma gate threshold voltage v (gs)th 3.5 4.0 4.5 v v ds = v gs , i d =1.21ma zero gate voltage drain current i dss - - - 10 5 - m a v ds =600, v gs =0v, t j =25c v ds =600, v gs =0v, t j =150c gate-source leakage current i gss - - 100 na v gs =20v, v ds =0v drain-source on-state resistance r ds(on) - - 0.089 0.232 0.099 - w v gs =10v, i d =14.5a, t j =25c v gs =10v, i d =14.5a, t j =150c gate resistance r g - 1 - w f =1mhz,opendrain table6dynamiccharacteristics values min. typ. max. parameter symbol unit note/testcondition input capacitance c iss - 3330 - pf v gs =0v, v ds =100v, f =1mhz output capacitance c oss - 140 - pf v gs =0v, v ds =100v, f =1mhz effective output capacitance, energy related 1) c o(er) - 110 - pf v gs =0v, v ds =0...400v effective output capacitance, time related 2) c o(tr) - 495 - pf i d =constant, v gs =0v, v ds =0...400v turn-on delay time t d(on) - 20 - ns v dd =400v, v gs =13v, i d =18.1a, r g =1.7 w ;seetable9 rise time t r - 10 - ns v dd =400v, v gs =13v, i d =18.1a, r g =1.7 w ;seetable9 turn-off delay time t d(off) - 50 - ns v dd =400v, v gs =13v, i d =18.1a, r g =1.7 w ;seetable9 fall time t f - 5 - ns v dd =400v, v gs =13v, i d =18.1a, r g =1.7 w ;seetable9 table7gatechargecharacteristics values min. typ. max. parameter symbol unit note/testcondition gate to source charge q gs - 20 - nc v dd =400v, i d =18.1a, v gs =0to10v gate to drain charge q gd - 24 - nc v dd =400v, i d =18.1a, v gs =0to10v gate charge total q g - 70 - nc v dd =400v, i d =18.1a, v gs =0to10v gate plateau voltage v plateau - 6.1 - v v dd =400v, i d =18.1a, v gs =0to10v 1) c o(er) isafixedcapacitancethatgivesthesamestoredenergyas c oss while v ds isrisingfrom0to400v 2) c o(tr) isafixedcapacitancethatgivesthesamechargingtimeas c oss while v ds isrisingfrom0to400v tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
7 600vcoolmos?p6powertransistor ipw60r099p6,ipp60r099p6,IPA60R099P6 rev.2.1,2015-05-18 final data sheet table8reversediodecharacteristics values min. typ. max. parameter symbol unit note/testcondition diode forward voltage v sd - 0.9 - v v gs =0v, i f =18.1a, t j =25c reverse recovery time t rr - 470 - ns v r =400v, i f =18.1a,d i f /d t =100a/s; see table 8 reverse recovery charge q rr - 9 - c v r =400v, i f =18.1a,d i f /d t =100a/s; see table 8 peak reverse recovery current i rrm - 37 - a v r =400v, i f =18.1a,d i f /d t =100a/s; see table 8 tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
8 600vcoolmos?p6powertransistor ipw60r099p6,ipp60r099p6,IPA60R099P6 rev.2.1,2015-05-18 final data sheet 5electricalcharacteristicsdiagrams diagram1:powerdissipation(nonfullpak) t c [c] p tot [w] 0 25 50 75 100 125 150 0 50 100 150 200 250 300 p tot =f( t c ) diagram2:powerdissipation(fullpak) t c [c] p tot [w] 0 25 50 75 100 125 150 0 5 10 15 20 25 30 35 40 p tot =f( t c ) diagram3:max.transientthermalimpedance(nonfullpak) t p [s] z thjc [k/w] 10 -5 10 -4 10 -3 10 -2 10 -1 10 -2 10 -1 10 0 10 1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse z thjc =f( t p );parameter: d=t p / t diagram4:max.transientthermalimpedance(fullpak) t p [s] z thjc [k/w] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse z thjc =f( t p );parameter: d=t p / t tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
9 600vcoolmos?p6powertransistor ipw60r099p6,ipp60r099p6,IPA60R099P6 rev.2.1,2015-05-18 final data sheet diagram5:safeoperatingarea(nonfullpak) v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =25c; d =0;parameter: t p diagram6:safeoperatingarea(fullpak) v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =25c; d =0;parameter: t p diagram7:safeoperatingarea(nonfullpak) v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 10 2 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =80c; d =0;parameter: t p diagram8:safeoperatingarea(fullpak) v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =80c; d =0;parameter: t p tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
10 600vcoolmos?p6powertransistor ipw60r099p6,ipp60r099p6,IPA60R099P6 rev.2.1,2015-05-18 final data sheet diagram9:typ.outputcharacteristics v ds [v] i d [a] 0 5 10 15 20 0 10 20 30 40 50 60 70 80 90 100 110 120 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =25c;parameter: v gs diagram10:typ.outputcharacteristics v ds [v] i d [a] 0 5 10 15 20 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =125c;parameter: v gs diagram11:typ.drain-sourceon-stateresistance i d [a] r ds(on) [ w ] 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 20 v 5.5 v 6 v 6.5 v 7 v 10 v r ds(on) =f( i d ); t j =125c;parameter: v gs diagram12:drain-sourceon-stateresistance t j [c] r ds(on) [ w ] -50 -25 0 25 50 75 100 125 150 0.05 0.10 0.15 0.20 0.25 0.30 98% typ r ds(on) =f( t j ); i d =14.5a; v gs =10v tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
11 600vcoolmos?p6powertransistor ipw60r099p6,ipp60r099p6,IPA60R099P6 rev.2.1,2015-05-18 final data sheet diagram13:typ.transfercharacteristics v gs [v] i d [a] 0 2 4 6 8 10 12 14 0 20 40 60 80 100 120 25 c 150 c i d =f( v gs ); v ds =20v;parameter: t j diagram14:typ.gatecharge q gate [nc] v gs [v] 0 10 20 30 40 50 60 70 80 0 1 2 3 4 5 6 7 8 9 10 120 v 480 v v gs =f( q gate ); i d =18.1apulsed;parameter: v dd diagram15:forwardcharacteristicsofreversediode v sd [v] i f [a] 0.0 0.5 1.0 1.5 2.0 10 -1 10 0 10 1 10 2 25 c 125 c i f =f( v sd );parameter: t j diagram16:avalancheenergy t j [c] e as [mj] 25 50 75 100 125 150 0 100 200 300 400 500 600 700 800 e as =f( t j ); i d =6.6a; v dd =50v tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
12 600vcoolmos?p6powertransistor ipw60r099p6,ipp60r099p6,IPA60R099P6 rev.2.1,2015-05-18 final data sheet diagram17:drain-sourcebreakdownvoltage t j [c] v br(dss) [v] -75 -50 -25 0 25 50 75 100 125 150 175 520 540 560 580 600 620 640 660 680 700 v br(dss) =f( t j ); i d =1ma diagram18:typ.capacitances v ds [v] c [pf] 0 100 200 300 400 500 10 0 10 1 10 2 10 3 10 4 ciss coss crss c =f( v ds ); v gs =0v; f =1mhz diagram19:typ.cossstoredenergy v ds [v] e oss [j] 0 100 200 300 400 500 0 1 2 3 4 5 6 7 8 9 10 e oss = f (v ds ) tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
13 600vcoolmos?p6powertransistor ipw60r099p6,ipp60r099p6,IPA60R099P6 rev.2.1,2015-05-18 final data sheet 6testcircuits table9diodecharacteristics table10switchingtimes table11unclampedinductiveload test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
14 600vcoolmos?p6powertransistor ipw60r099p6,ipp60r099p6,IPA60R099P6 rev.2.1,2015-05-18 final data sheet 7packageoutlines figure1outlinepg-to247,dimensionsinmm/inches test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
15 600vcoolmos?p6powertransistor ipw60r099p6,ipp60r099p6,IPA60R099P6 rev.2.1,2015-05-18 final data sheet figure2outlinepg-to220,dimensionsinmm/inches test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
16 600vcoolmos?p6powertransistor ipw60r099p6,ipp60r099p6,IPA60R099P6 rev.2.1,2015-05-18 final data sheet figure3outlinepg-to220fullpak,dimensionsinmm/inches test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d a2 h b d c b2 e e1 e l q ?3 l1 n d1 a dim a1 document no. z8b00003319 2.5 revision 04 05-05-2014 issue date european projection 1.130 0.177 min 0.095 0.026 0.016 0.617 0.037 0.092 0.394 0.503 0.116 0.124 0.111 0.353 2.86 2.42 2.54 (bsc) 5.08 28.70 0.95 15.67 0.40 0.65 10.00 2.83 3.15 2.95 12.78 8.97 3 29.75 0.90 0.63 1.51 16.15 3.50 3.38 3.45 13.75 10.65 9.83 millimeters min 4.50 2.34 max 4.90 2.85 0.113 0.100 (bsc) 0.200 3 1.171 0.059 0.636 0.025 0.035 0.419 0.136 0.133 0.138 0.541 0.387 0 inches 0.193 max 0.112 scale 5mm 0 2.5 b1 0.037 0.95 1.38 0.054 b4 0.026 0.65 1.51 0.059 b3 0.026 0.65 1.38 0.054 tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
17 600vcoolmos?p6powertransistor ipw60r099p6,ipp60r099p6,IPA60R099P6 rev.2.1,2015-05-18 final data sheet 8appendixa table12relatedlinks ? ifxcoolmos tm p6webpage: www.infineon.com ? ifxcoolmos tm p6applicationnote: www.infineon.com ? ifxcoolmos tm p6simulationmodel: www.infineon.com ? ifxdesigntools: www.infineon.com test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d a2 h b d c b2 e e1 e l q ?3 l1 n d1 a dim a1 document no. z8b00003319 2.5 revision 04 05-05-2014 issue date european projection 1.130 0.177 min 0.095 0.026 0.016 0.617 0.037 0.092 0.394 0.503 0.116 0.124 0.111 0.353 2.86 2.42 2.54 (bsc) 5.08 28.70 0.95 15.67 0.40 0.65 10.00 2.83 3.15 2.95 12.78 8.97 3 29.75 0.90 0.63 1.51 16.15 3.50 3.38 3.45 13.75 10.65 9.83 millimeters min 4.50 2.34 max 4.90 2.85 0.113 0.100 (bsc) 0.200 3 1.171 0.059 0.636 0.025 0.035 0.419 0.136 0.133 0.138 0.541 0.387 0 inches 0.193 max 0.112 scale 5mm 0 2.5 b1 0.037 0.95 1.38 0.054 b4 0.026 0.65 1.51 0.059 b3 0.026 0.65 1.38 0.054 tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
18 600vcoolmos?p6powertransistor ipw60r099p6,ipp60r099p6,IPA60R099P6 rev.2.1,2015-05-18 final data sheet revisionhistory ipw60r099p6, ipp60r099p6, IPA60R099P6 revision:2015-05-18,rev.2.1 previous revision revision date subjects (major changes since last revision) 2.0 2014-03-07 release of final version 2.1 2015-05-18 rdson max change from 105 to 99mohm welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com publishedby infineontechnologiesag 81726mnchen,germany ?2015infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.with respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestinfineon technologiesoffice( www.infineon.com ). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d a2 h b d c b2 e e1 e l q ?3 l1 n d1 a dim a1 document no. z8b00003319 2.5 revision 04 05-05-2014 issue date european projection 1.130 0.177 min 0.095 0.026 0.016 0.617 0.037 0.092 0.394 0.503 0.116 0.124 0.111 0.353 2.86 2.42 2.54 (bsc) 5.08 28.70 0.95 15.67 0.40 0.65 10.00 2.83 3.15 2.95 12.78 8.97 3 29.75 0.90 0.63 1.51 16.15 3.50 3.38 3.45 13.75 10.65 9.83 millimeters min 4.50 2.34 max 4.90 2.85 0.113 0.100 (bsc) 0.200 3 1.171 0.059 0.636 0.025 0.035 0.419 0.136 0.133 0.138 0.541 0.387 0 inches 0.193 max 0.112 scale 5mm 0 2.5 b1 0.037 0.95 1.38 0.054 b4 0.026 0.65 1.51 0.059 b3 0.026 0.65 1.38 0.054 tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3

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